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Advance Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS(on) = 0.39 trr 250 ns
PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 1000 1000 20 30 24 96 24 60 3.0 10 560 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C
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G
(TAB) D
TO-264 AA (IXFK)
G D S
(TAB)
G = Gate S = Source Features
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D = Drain TAB = Drain
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0.4/6 Nm/lb.in. 6 10 g g
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RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V 200 nA TJ = 25C TJ = 125C 100 A 3 mA 0.39
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VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers
Advantages
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PLUS 247TM package for clip or spring mounting Space savings High power density
(c) 2002 IXYS All rights reserved
98874 (1/02)
IXFK 24N100F IXFX 24N100F
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 16 24 6600 VGS = 0 V, VDS = 25 V, f = 1 MHz 760 230 22 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External) 18 52 11 195 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 100 0.21 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
A A1 A2 b b1 b2 C D E e L L1 Q R Dim.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
PLUS 247TM Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
V DS = 10 V; ID = 0.5 ID25
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 24 96 1.5 250 A A V ns C A
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
TO-264 AA Outline
IF = IS,-di/dt = 100 A/s, VR = 100 V
1.4 10
Dim.
Note: 1. Pulse test, t 300 s, duty cycle d 2 %
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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